title
  • image of FET, MOSFET Arrays>WAS350M12BM3
  • image of FET, MOSFET Arrays>WAS350M12BM3
  • Part number WAS350M12BM3
    Product classification FET, MOSFET Arrays
    description SIC 2N-CH 1200V 417A
    encapsulation Box
    quantity 200
    price $922.6600
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrWolfspeed
    Series-
    PackageBox
    Product StatusACTIVE
    Package / CaseModule
    Mounting TypeChassis Mount
    Configuration2 N-Channel (Half Bridge)
    Operating Temperature-40°C ~ 150°C (TJ)
    TechnologySilicon Carbide (SiC)
    Drain to Source Voltage (Vdss)1200V (1.2kV)
    Current - Continuous Drain (Id) @ 25°C417A (Tc)
    Input Capacitance (Ciss) (Max) @ Vds25700pF @ 800V
    Rds On (Max) @ Id, Vgs5.2mOhm @ 350A, 15V
    Gate Charge (Qg) (Max) @ Vgs844nC @ 15V
    Vgs(th) (Max) @ Id3.6V @ 85mA
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