title
  • image of Single FETs, MOSFETs>TPH3205WSBQA
  • image of Single FETs, MOSFETs>TPH3205WSBQA
  • Part number TPH3205WSBQA
    Product classification Single FETs, MOSFETs
    description GANFET N-CH 650V 35A TO247-3
    encapsulation Tube
    quantity 200
    price
    RoHS status NO
    specifications
    PDF(1)
    PDF(2)
    TYPEDESCRIPTION
    MfrTransphorm
    Series-
    PackageTube
    Product StatusOBSOLETE
    Package / CaseTO-247-3
    Mounting TypeThrough Hole
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C35A (Tc)
    Rds On (Max) @ Id, Vgs62mOhm @ 22A, 8V
    Power Dissipation (Max)125W (Tc)
    Vgs(th) (Max) @ Id2.6V @ 700µA
    Supplier Device PackageTO-247-3
    GradeAutomotive
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)±18V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs42 nC @ 8 V
    Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 400 V
    QualificationAEC-Q101
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