title
  • image of Single FETs, MOSFETs>TP65H070G4QS-TR
  • image of Single FETs, MOSFETs>TP65H070G4QS-TR
  • Part number TP65H070G4QS-TR
    Product classification Single FETs, MOSFETs
    description 650 V 29 A GAN FET
    encapsulation Tape & Reel (TR)
    quantity 200
    price $8.6100
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrTransphorm
    Series-
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case8-PowerSFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C29A (Tc)
    Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
    Power Dissipation (Max)96W (Tc)
    Vgs(th) (Max) @ Id4.8V @ 700µA
    Supplier Device PackageTOLL
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
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