specifications
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TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 3-SMD, Flat Leads |
Mounting Type | Surface Mount |
Operating Temperature | 150°C |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Rds On (Max) @ Id, Vgs | 103mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 500mW (Ta) |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Supplier Device Package | UFM |
Grade | Automotive |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs (Max) | +6V, -8V |
Drain to Source Voltage (Vdss) | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
Qualification | AEC-Q101 |