specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | 12-PowerDIP Module (1.118", 28.40mm) |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 40V |
| Rds On (Max) @ Id, Vgs | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | APM12-CBA |
| Grade | Automotive |
| Qualification | AEC-Q100 |