specifications
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| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.1kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 338A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 16410pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 876nC @ 20V |
| Vgs(th) (Max) @ Id | 4.4V @ 120mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |