specifications
| TYPE | DESCRIPTION |
| Mfr | Microsemi Corporation |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | M218 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C |
| Gain | 8dB |
| Power - Max | 400W |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Supplier Device Package | M218 |