title
  • image of FET, MOSFET Arrays>FBG30N04CSH
  • image of FET, MOSFET Arrays>FBG30N04CSH
  • Part number FBG30N04CSH
    Product classification FET, MOSFET Arrays
    description GANFET 2N-CH 300V 4A 4SMD
    encapsulation Bulk
    quantity 250
    price $421.3000
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrEPC Space
    SerieseGaN®
    PackageBulk
    Product StatusACTIVE
    Package / Case4-SMD, No Lead
    Mounting TypeSurface Mount
    Configuration2 N-Channel
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss)300V
    Current - Continuous Drain (Id) @ 25°C4A (Tc)
    Input Capacitance (Ciss) (Max) @ Vds450pF @ 150V
    Rds On (Max) @ Id, Vgs404mOhm @ 4A, 5V
    Gate Charge (Qg) (Max) @ Vgs2.6nC @ 5V
    Vgs(th) (Max) @ Id2.8V @ 600µA
    Supplier Device Package4-SMD
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