title
  • image of Single FETs, MOSFETs>CGD65A130S2-T13
  • image of Single FETs, MOSFETs>CGD65A130S2-T13
  • Part number CGD65A130S2-T13
    Product classification Single FETs, MOSFETs
    description 650V GAN HEMT, 130MOHM, DFN8X8.
    encapsulation Tape & Reel (TR)
    quantity 3552
    price $3.3200
    RoHS status YES
    specifications
    TYPEDESCRIPTION
    MfrCambridge GaN Devices
    SeriesICeGaN™
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case16-PowerVDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Current - Continuous Drain (Id) @ 25°C12A (Tc)
    Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
    FET FeatureCurrent Sensing
    Vgs(th) (Max) @ Id4.2V @ 4.2mA
    Supplier Device Package16-DFN (8x8)
    Drive Voltage (Max Rds On, Min Rds On)12V
    Vgs (Max)+20V, -1V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
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