title
  • image of Single FETs, MOSFETs>CGD65A055S2-T07
  • image of Single FETs, MOSFETs>CGD65A055S2-T07
  • Part number CGD65A055S2-T07
    Product classification Single FETs, MOSFETs
    description 650V GAN HEMT, 55MOHM, DFN8X8. W
    encapsulation Tape & Reel (TR)
    quantity 937
    price $9.5400
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrCambridge GaN Devices
    SeriesICeGaN™
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case16-PowerVDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Current - Continuous Drain (Id) @ 25°C27A (Tc)
    Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
    FET FeatureCurrent Sensing
    Vgs(th) (Max) @ Id4.2V @ 10mA
    Supplier Device Package16-DFN (8x8)
    Drive Voltage (Max Rds On, Min Rds On)12V
    Vgs (Max)+20V, -1V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs6 nC @ 12 V
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