specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |